# Quantitative Theory of the P-N Diode Currents MCQ’s

This set of Electronic Devices & Circuits Multiple Choice Questions & Answers (MCQs) focuses on “Quantitative Theory of the P-N Diode Currents”.

1. If what of the following is doped into a semiconductor say germanium a P-N junction is formed.
a) Electrons and Protons
b) Protons and Neutrons
c) Neutrons and Electrons
d) Gallium and Phosphorus

2. Which of the factors doesn’t change the diode current.
a) Temperature
b) External voltage applied to the diode
c) Boltzmann‘s constant
d) Resistance

3. What is the thickness of ‘space charge region’ or ‘transition region’ in P-N junction diode?
a) 1 micron
b) 5 micron
c) 10 micron
d) 2.876 micron

4. The product of mobility of the charge carriers and applied Electric field intensity is known as
a) Drain velocity
b) Drift velocity
c) Push velocity
d) Pull velocity

5. If the drift current is 100mA and diffusion current is 1A what is the total current in the semiconductor diode.
a) 1.01 A
b) 1.1 A
c) 900m A
d) 10 A

6. The drift velocity is 5V and the applied electric field intensity 20v/m what will be the mobility of charge carriers.
a) 100 m2/ (vs)
b) 4 m2/ (vs)
c) 15 m2/ (vs)
d) 0.25 m2/ (vs)

7. The tendency of charge carriers to move from a region of heavily concentrated charges to region of less concentrated charge is known as.
a) Depletion current
b) Drain current
c) Diffusion current
d) Saturation current

8. Which of the following is reverse biased?

a) A)
b) B)
c) C)
d) D)

9. When there is an open circuit what will be the net hole current.
a) 5A
b) 0.05A
c) 0.5A
d) 0A

10. Rate of change of concentration per unit length in a semiconductor is called as.
a) Concentration change
b) Concentration mixture
d) Concentration variant

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