Characteristics of JFET MCQ’s

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This set of Analog Electronic Circuits Multiple Choice Questions & Answers (MCQs) focuses on “Characteristics of JFET”.

1. The n-channel JFET, the pinch off voltage is ______________
a) not greater than 0
b) greater than or equal to 0
c) less than or equal to 0
d) not less than 0

2. The built-in barrier potential in a N-channel JFET is ___________
a) less than the internal pinch-off voltage
b) equal to the internal pinch-off voltage
c) greater than the internal pinch-off voltage
d) not related to the internal pinch-off voltage

3. JFET is a ______ carrier device.
a) Unipolar
b) Bipolar
c) Minority
d) Majority

4. If channel thickness increases, the internal pinch-off voltage ___________
a) Decreases
b) Increases
c) Remains the same
d) Increases logarithmically

5. The cut-off frequency of a JFET is that time when the magnitude of the input current is ___________
a) Greater than the output current
b) Less than the output current
c) Equal to the output current
d) Twice the output current

6. How is the transconductance at saturation related to the pinch off voltage of the JFET?
a) Inversely proportional
b) Directly proportional
c) Inverse-squarely related
d) Directly and proportional to square of the pinch-off voltage

7. If the doping concentration of the gate increases, the internal pinch-off voltage ___________
a) Increases logarithmically
b) Increases linearly
c) Increases exponentially
d) Decreases linearly

8. The cut-off frequency of a JFET is ___________
a) linearly related to the transconductance of the JFET
b) inversely proportional to the transconductance of the JFET
c) exponentially related to the transconductance of the JFET
d) logarithmically related to the transconductance of the JFET

9. When an N-channel JFET reaches pinch-off, the increase in the drain to source voltage results in shifting of the pinch-off position towards the ___________
a) Gate
b) Drain
c) Source
d) Does not shift

10. An N-channel JFET is ___________
a) Always ON
b) Always OFF
c) Enhancement mode JFET
d) Has a p-type substrate

11. A P-channel JFET is___________
a) Always ON
b) Always OFF
c) Depletion mode JFET
d) Has an n-type substrate

12. How is the metallurgical channel thickness between the gate and the substrate related to the doping concentration of the channel?
a) Inversely proportional to the square root of the doping concentration
b) Logarithmically related to the square root of the doping concentration
c) Directly proportional to the square root of the doping concentration
d) Exponentially related to the square root of the doping concentration

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