Basic Planar Process – 3 MCQ’s

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This set of Signals & Systems Multiple Choice Questions & Answers (MCQs) focuses on “Basic Planar Process – 3″.

1. Which isolation technique is used in applications like military and aeroscope?
a) Thin film isolation
b) PN-junction isolation
c) Barrier isolation
d) Dielectric isolation

2. Pick out the incorrect statement
Aluminium is usually used for metallization of most IC as it offers
a) Relatively a good conductor
b) High resistance
c) Good mechanical bond with silicon
d) Deposition of aluminium film using vacuum deposition

3. The major disadvantage of PN-junction isolation technique is:
a) Formation of Parasitic Resistance
b) Formation of Parasitic Capacitance
c) Formation of Isolation island
d) None of the mentioned

4. How the aluminium film coating is carried out in metallization process?
a) Heating and pouring aluminium in required place.
b) Aluminium is vacuum evaporated and then condensed
c) Placing the aluminium in required place and then heating it using tungsten
d) None of the mentioned

5. Metal can IC packages are available in
a) 42 leads
b) 16 leads
c) 12 leads
d) 24 leads

6. Which semiconductor is most widely used for fabrication of Integrated Circuit?
a) Germanium, Ge
b) Gallium Arsenide, GaAs
c) Silicon, Si
d) All of the mentioned

7. What type of packing is suitable for Integrated Circuits?
a) Metal can package
b) Dual-in-line package
c) Ceramic flat package
d) All of the mentioned

8. What process is used in semiconductor industry to fabricate Integrated Circuits?
a) Silicon wafer preparation
b) Silicon planar process
c) Epitaxial growth of silicon
d) Photolithography process

9. What will be the next step after slicing (process) silicon wafers?
a) All of the mentioned
b) Lapping
c) Polishing
d) Chemical

10. In which method shallow penetration of dopants is possible?
a) Ion implantation
b) Vertical diffusion
c) Horizontal diffusion
d) Dopants diffusion

11. During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through
a) Strong Electric field
b) Strong Magnetic field
c) Strong Electric and Magnetic Field
d) None of the mentioned

12. Which method is most suitable for silicon crystal growth in silicon wafer preparation?
a) Float zone process
b) Bridgeman-Stockbarger method
c) Czochralski crystal growth process
d) Laser heated pedestal growth

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