Active and Passive Components of IC – 2 MCQ’s

Read Time:2 Minute, 12 Second

This set of Signals & Systems Multiple Choice Questions & Answers (MCQs) focuses on “Active and Passive Components of IC – 2″.

1. In Schottky barrier diode, which contact has similar characteristics to that of an ordinary PN diode?
a) Ohmic contact
b) Schottky barrier contact
c) Both ohmic and Schottky barrier contact
d) None of the mentioned

2. Find the symbol for Schottky barrier diode from the given circuit diagram?
Metal semiconductor diode or Schottky diode symbol
Zener diode symbol
Tunnel diode symbol
Generic diode symbol

3. The number of leads in schottky barrier diode are
a) Four
b) Three
c) Two
d) Six

4. How the ohmic contact is formed in metal semiconductor diode? (AL-Aluminium)
a) n+ diffusion in p-region near AL lead
b) p+ diffusion in p-region near AL lead
c) n+ diffusion in n-region near AL lead
d) p+ diffusion in n-region near AL lead

5. Find the application areas, where Schottky diode can be used?
a) Radio frequency
b) Power rectifier
c) Clamping diode
d) All of the mentioned

6. Which of the following is not true about diffused resistor?
a) Limitation due to small range of resistance
b) Resistance depends upon surface geometry
c) Resistance depends on diffusion characteristic of material
d) Diffused resistors are non-economical

7. The flow of current in Schottky barrier diode is due to
a) Majority and Minority carriers
b) Majority carriers
c) Minority carriers
d) None of the mentioned

8. Which of the following resistor is not used as an integrated resistor?
a) Poly gate resistor
b) Pinched resistor
c) Epitaxial resistor
d) Thin film resistor

9. Determine the formula for sheet resistance (Rs).
a) R×L×W
b) R×(L×ρ)/W
c) R×(W/L)
d) R×(W×ρ)/L

10. If a 25Ω diffused resistor is to be designed for an emitter resistor, determine the pattern in which it is fabricated?
a) 20mil long by 5mil wide
b) 25mil long by 1mil wide
c) 5mil long by 1mil wide
d) 16mil long by 4mil wide

11. Match the sheet resistance value for the following region in diffused resistor

1. Epitaxial Collector regioni. 200Ω/square
2. p-type base regionii. 1 to 10kΩ/square
3. n-type emitter regioniii. 5Ω/square

a) 1-I, 2-ii, 3-iii
b) 1-ii, 2-I, 3-iii
c) 1-iii, 2-I, 3-ii
d) 1-iii, 2-ii, 3-i

12. Consider a 52cm×52cm material of uniform resistivity 100Ωm and thickness 3cm. Find the area and resistance of this sheet of material.
a) 16 m2, 1.923 Ω/square
b) 8112 cm2, 1.733 Ω/square
c) 156 cm2, 33.33 Ω/square
d) 901 cm2, 3.333 Ω/square

13. The number of square contained in the integrated resistor by diffused resistor method depend on ratio of
a) ρ/t
b) ρ×L/W
c) W/L×t
d) L/W

0 %
0 %
0 %
0 %
0 %
0 %

Average Rating

5 Star
4 Star
3 Star
2 Star
1 Star

Leave a Reply

Your email address will not be published. Required fields are marked *

Previous post Active and Passive Components of IC – 1 MCQ’s
Next post Active and Passive Components of IC – 3 MCQ’s