Active and Passive Components of IC – 1 MCQ’s

Read Time:2 Minute, 33 Second

This set of Signals & Systems Multiple Choice Questions & Answers (MCQs) focuses on “Active and Passive Components of IC – 1″.

1. Why monolithic IC transistor is preferred over discrete planar epitaxial transistor?
a) Due to structural difference
b) Increase in VCE (sat) and collector series resistor
c) Improvement in circuit performance
d) All of the mentioned

2. Name the process that is used to overcome the increase in collector series resistance, which occurs due to the presence of collector contact at the top of integrated transistor.
a) Buried n+ layer
b) Buried p+ layer
c) Triple diffused layer
d) Buried epitaxial layer

3. Which is the most striking feature in monolithic integrated circuit transistor?
a) Collector contact is present at the bottom of IC
b) Collector contact is present at the top of IC
c) Collector contact is absent
d) Collector contact is present on one of the sides of IC

4. What is the reason for using Lateral pnp transistor in Integrated Circuits?
a) Requires simple process control
b) Simultaneous fabrication of pnp and npn transistors
c) Provide good isolation
d) Miniaturization and cost reduction

5. The ‘buried layer’ reduces collector series resistance by providing,
a) A low resistivity current path from n-type layer to n+ contact layer
b) A low resistivity current path from p-type layer to n+ contact layer
c) A high resistivity current path from n-type layer to n+ contact layer
d) A high resistivity current path from p-type layer to n+ contact layer

6. Which method is used in the fabrication of pnp transistor?
a) Vertical substrate pnp
b) Triple diffused pnp
c) Lateral pnp
d) All of the mentioned

7. Which of the following transistor has the limitation, due to the requirement of additional fabrication steps and design consideration?
a) Vertical pnp transistor
b) Lateral pnp transistor
c) Triple diffused pnp transistor
d) Substrate pnp transistor

8. At what potential, the substrate of a vertical pnp transistor should be kept to attain good isolation?
a) Same potential
b) Positive potential
c) Different potential
d) Negative potential

9. State the correct reason for neglecting pnp transistor.
a) Increase in the series collector resistance of pnp transistor
b) Parasitic capacitance appears between collector and substrate
c) Current gain of pnp transistor is as low as 1.5 to 30
d) None of the mentioned

10. The advantage of Multi-emitter transistor is
a) To reduce fabrication steps
b) To save chip area
c) To lower design consideration
d) To provide linear output

11. Choose the appropriate value of diode to get a speedy diode from the given values of storage time (n) in sec and forward voltage (V γ).
a) n = 56 , V γ = 0.96
b) n = 100 , V γ = 0.92
c) n = 9 , V γ = 0.85
d) n = 53 , V γ = 0.95

12. The diffusion of collector impurities in npn transistor should be small because,
a) No additional diffusion or masking steps required
b) Bandwidth is controlled by lateral diffusion of p-type impurity
c) Collector need not be kept at negative potential
d) None of the mentioned

13. Which transistor is best suitable to achieve very fast switching in digital circuits?
a) Lateral pnp transistor
b) Schottky transistor
c) Multi-emitter transistor
d) NPN transistor

Happy
Happy
0 %
Sad
Sad
0 %
Excited
Excited
0 %
Sleepy
Sleepy
0 %
Angry
Angry
0 %
Surprise
Surprise
0 %

Average Rating

5 Star
0%
4 Star
0%
3 Star
0%
2 Star
0%
1 Star
0%

Leave a Reply

Your email address will not be published. Required fields are marked *

Previous post Basic Planar Process – 3 MCQ’s
Next post Active and Passive Components of IC – 2 MCQ’s